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PVA TePla

GigaBatch

Etch75 mm to 100 mmPVA TePla GigaBatch family
Research Quality: 60% complete

The PVA TePla GigaBatch is a batch plasma stripper and surface cleaner that uses high-frequency microwave plasma at 2.45 GHz. The GigaBatch is designed for photoresist stripping, surface cleaning, and descuming before wet etching. The GigaBatch operates with oxygen gas and is available in two chamber variants: the GIGAbatch 360 and the GIGAbatch 380M.[1][2]

GigaBatch — epfl.ch
Fig. 01GigaBatchepfl.ch[1]
  • Plate 01PVATepla GIGABatch 360M O2 PLASMA power on DV

    瀚柏科技 CO., LTDWatch on YouTube
  • Plate 02穎強科技-PVA TePla 微波電漿清洗機 GIGAbatch 360 380P 介紹

    Afen LiuWatch on YouTube

Wafer size

75 mm to 100 mm

Vacuum

Quartz primary vacuum chamber[1]

Performance

20% to 30% depending on process time[1]

Gas delivery

O2[1]

What it is

The PVA TePla GigaBatch is a microwave-frequency batch plasma stripper designed for photoresist stripping, surface cleaning, and descumming. The system operates at 2.45 GHz and is available in two chamber sizes: the GIGAbatch 360M with a 245 mm inner diameter quartz chamber, and the GIGAbatch 380M with a 300 mm inner diameter chamber. The GigaBatch can process wafers from 2 inches to 8 inches in diameter. The standard quartz holder accommodates 25 wafers, and higher throughput configurations support up to 75 wafers per run.[2][1]

How it works

The GigaBatch uses a quartz vacuum chamber. Plasma is generated by a microwave source at 2.45 GHz with power adjustable from 0 to 1000 W. Oxygen gas is introduced at flow rates up to 1000 ml/min. The process pressure is typically set at 0.5 mbar or 0.8 mbar for standard recipes. Wafers are loaded into a quartz boat that remains inside the chamber during operation.[2][1]

Where it fits in the process flow

The GigaBatch is used for photoresist stripping after lithography, wafer surface cleaning before subsequent processes, and descumming prior to wet etching.[1]

Applications

The GigaBatch is suitable for stripping positive and negative photoresists. Allowed substrate materials include silicon, glass, and Pyrex. Metals such as gold, silver, copper, chromium, and iron are not permitted in the chamber. Plastics can be processed with caution using a special holder and reduced power.[1]

  • Photo resist stripping
  • Wafer surface cleaning before subsequent processes
  • Descumming before wet etching

Why won't it start?

Documented failure modes, common issues, and field considerations.

  • Gold must not be loaded in the tool, even if covered and protected.
  • Ag, Cu, Cr, and Fe are not welcome in the tool.
  • Materials that deteriorate easily upon exposure to oxygen should not be processed in the machine.

What do the numbers mean?

Vacuum & pumping5

Primary vacuum chamber
Quartz primary vacuum chamber[1]
Accurate?
Primary vacuum chamber dimensions
D int. 245 mm x Prof. 380 mm[1]
Accurate?
Vacuum chamber material
Quartz[1]
Accurate?
Process pressure
0.5 to 0.8 mbar[1]
Accurate?
Chamber
Quartz primary vacuum chamber, D int. 245 mm x Prof. 380 mm[1]
Accurate?

Wafer handling9

Wafer capacity
25 wafers[1]
Accurate?
Wafer size range
75 mm to 100 mm[1]
Accurate?
Supported wafer sizes
75 mm to 100 mm[1]
Accurate?
Wafer batch size
Up to 25 wafers per run (75-100 mm)[1]
Accurate?
Substrate handling
2" to 8" wafers (GIGAbatch 360/380M)[2]
Accurate?
Wafer capacity
25 wafers, 75 mm to 100 mm diameter[1]
Accurate?
Wafer capacity
25 wafers from 75 mm to 100 mm[1]
Accurate?
Holder capacity
25 wafers[1]
Accurate?
Wafer size
75 mm to 100 mm[1]
Accurate?

Gas & chemistry7

Gas
O2[1]
Accurate?
Process gas
O₂ (max flow 1000 ml/min)[1]
Accurate?
Positive resist etch rate (high power)
250 nm/min to 1.2 µm/min[1]
Accurate?
Positive resist etch rate (low power)
100 nm/min to 500 nm/min[1]
Accurate?
Process gas
O2 (max flow 1000 ml/min)[1]
Accurate?
Gas
O2 (max flow 1000 ml/min)[1]
Accurate?
Gas flow
Maximum 1000 ml/min[1]
Accurate?

Performance1

Uniformity
20% to 30% depending on process time[1]
Accurate?

Dimensions & facilities5

Chamber depth
380 mm[1]
Accurate?
Chamber depth
380 mm (EPFL version); 395 mm (GIGAbatch 360/380M)[1]
Accurate?
Dimensions (w/h/d)
Approx. 795 x 1540 x 710 mm[2]
Accurate?
Weight
190 kg[2]
Accurate?
Chamber dimensions (internal)
Diameter 245 mm, Depth 380 mm[1]
Accurate?

Configuration & options12

Plasma type
High frequency plasma[1]
Accurate?
Plasma frequency
2.45 GHz[1]
Accurate?
Plasma power
200 to 600 W[1]
Accurate?
O2 maximum flow
1000 ml/min[1]
Accurate?
Plasma power range
200 to 600 W[1]
Accurate?
Chamber material
Quartz[1]
Accurate?
Chamber inner diameter
245 mm[1]
Accurate?
Plasma power
200 to 600 W (standard); up to 1000 W (available)[1]
Accurate?
Chamber diameter
245 mm (GIGAbatch 360); 300 mm (GIGAbatch 380M)[2]
Accurate?
Power range
200 to 600 W[1]
Accurate?
Process time (High Power)
1 min to 30 min (PR_Strip_High_xx)[1]
Accurate?
Process time (Low Power)
10 sec to 15 min (PR_Strip_Low_xx)[1]
Accurate?

Vintage & configurations

Documented models & variants

DesignationGenerationVintageChangesSource
GIGAbatch 360——Chamber diameter 245 mm, volume 18 l, depth 395 mmpvatepla.com[2]
GIGAbatch 380M——Chamber diameter 300 mm, volume 28 l, depth 395 mmpvatepla.com[2]
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • GasO2[1]
  • Primary vacuum chamberQuartz primary vacuum chamber[1]
  • Primary vacuum chamber dimensionsD int. 245 mm x Prof. 380 mm[1]
  • Process gasO₂ (max flow 1000 ml/min)[1]
  • Positive resist etch rate (high power)250 nm/min to 1.2 µm/min[1]
  • Positive resist etch rate (low power)100 nm/min to 500 nm/min[1]
  • Process gasO2 (max flow 1000 ml/min)[1]
  • Vacuum chamber materialQuartz[1]
  • Process pressure0.5 to 0.8 mbar[1]
  • GasO2 (max flow 1000 ml/min)[1]
  • ChamberQuartz primary vacuum chamber, D int. 245 mm x Prof. 380 mm[1]
  • Gas flowMaximum 1000 ml/min[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What plasma frequency does the GigaBatch use?

The GigaBatch uses a microwave frequency of 2.45 GHz.[2][1]

What gases are used in the GigaBatch?

The system uses oxygen (O2) gas with a maximum flow of 1000 ml/min.[1]

What wafer sizes can the GigaBatch process?

The GigaBatch can process wafers from 2 inches (50 mm) up to 8 inches (200 mm) in diameter.[2]

What materials are not allowed in the GigaBatch?

Gold, silver, copper, chromium, and iron are not allowed in the chamber.[1]

Not publicly documented

The following facts about the GigaBatch are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the GigaBatch are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • The control-system platform and OS era of the GigaBatch are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • The process node or technology generation of the GigaBatch is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

  • No publicly documented compatible parts, consumables, or accessories for the GigaBatch are on record.

    Answerable by: an OEM parts catalog or a service engineer

  • No publicly hosted manuals, SOPs, or datasheets for the GigaBatch are on record.

    Answerable by: university cleanroom staff or an OEM application specialist

Sources & citations

Sources (3)Every fact above is drawn from these public sources
  1. [1]epfl.ch — epfl.chepfl.ch
  2. [2]pvatepla.com — pvatepla.compvatepla.com
  3. [3]epfl.chepfl.ch
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Last updated Oct 9, 2026.

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