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Samsung

DDR4 DRAM Chips

Produced 2011–Samsung DDR4 DRAM Chips family
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SamsungDDR4 DRAM Chips
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Produced

2011–

Power

1.2 V[1]

Optics

1x nm[2]

What it is

The Samsung DDR4 product family uses a 1.2 V operating voltage, supports bandwidth up to 3,200 Mbps, and uses a Pseudo Open Drain interface.[2]

How it works

Samsung DDR4 uses four bank groups with a total of sixteen banks to reduce interleaving delays.[2]

Samsung DDR4 includes Write CRC and parity checks for command and address transmission to improve data transmission reliability.[2]

Where it fits in the process flow

Samsung DDR4 is intended for systems that need high bandwidth, lower power consumption, and improved reliability in memory traffic.[2]

What do the numbers mean?

Power & electrical2

Operating voltage
1.2 V[1]
Accurate?
Clock rate
800–1600 MHz[1]
Accurate?

Wafer handling3

Maximum data transfer rate
3,200 Mbps[2]
Accurate?
Transfer rate range
1600 MT/s to 3200 MT/s[1]
Accurate?
Standard transfer rates
1600, 1866, 2133, 2400, 2666, 2933, 3200 MT/s[1]
Accurate?

Optics & imaging1

Node process
1x nm[2]
Accurate?

Configuration & options10

Type
Synchronous dynamic random-access memory (SDRAM)[1]
Accurate?
Generation
4th generation[1]
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Release date
2014[1]
Accurate?
Bank groups
4 bank groups (total 16 banks)[2]
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System memory bandwidth
1 TB/s[2]
Accurate?
Prefetch buffer
8n-prefetch architecture[1]
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Bandwidth range
12.8 GB/s to 25.6 GB/s[1]
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Internal banks
16 (4 bank select bits)[1]
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Ranks per DIMM
Up to 8[1]
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ECC support
Optional[1]
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Vintage & configurations

  1. 2011Production start[1]

    Samsung announced the completion and release for testing of a 2 GB DDR4 DRAM module based on a process between 30 and 39 nm.

  2. 2016Production start[1]

    Samsung announced mass production of DRAM on a '10nm-class' process (1x nm node regime of 16nm to 19nm) supporting a 30% faster data transfer rate of 3,200 Mbit/s.

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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Operating voltage1.2 V[1]
  • Clock rate800–1600 MHz[1]

Where are the manuals?

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Not publicly documented

Field notes

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Frequently asked questions

What is the model designation?

The model designation is DDR4.[3]

What type of item is it?

It is a DRAM memory chip.[3]

Not publicly documented

The following facts about the DDR4 DRAM Chips are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented variants, configuration options, or revision breakpoints of the DDR4 DRAM Chips are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the DDR4 DRAM Chips are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the DDR4 DRAM Chips are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the DDR4 DRAM Chips is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

  • No publicly documented compatible parts, consumables, or accessories for the DDR4 DRAM Chips are on record.

    Answerable by: an OEM parts catalog or a service engineer

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Sources & citations

Sources (3)Every fact above is drawn from these public sources
  1. [1]en.wikipedia.org — en.wikipedia.orgen.wikipedia.org
  2. [2]semiconductor.samsung.com — semiconductor.samsung.comsemiconductor.samsung.com
  3. [3]Equipment inventory listing
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Last updated Oct 11, 2026.

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