Varian

Wafer size
10 Site Disk, 10 Wafer per Batch
Power
Power Supply Interface (PSI) Controller[1]
Vacuum
Source Vacuum Controller[1]
Gas delivery
Fully Automated Gas Box, 4 Gas Modules[1]
Optics
Included[3]
The Varian Kestrel II 750 is an ion implantation system for semiconductor wafer doping.[3]
Ion implanters accelerate a beam of ionized dopant atoms and direct that beam into a semiconductor wafer.
Ion implantation is a doping step in semiconductor fabrication.
Implantation follows pattern definition steps and precedes annealing that activates dopants and repairs crystal damage.
The Kestrel II 750 is used for semiconductor wafer doping by ion implantation.[3]
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The following facts about the Kestrel II 750 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Kestrel II 750 are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the Kestrel II 750 are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the Kestrel II 750 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the Kestrel II 750 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the Kestrel II 750 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No research found yet — worked with this tool? Share what you know.
Last updated Oct 4, 2026.
The Varian 0216 7696, E 11368072 ESC is an electrostatic chuck (ESC) platen of the ADV-S type, categorized under ion implantation equipment.
The Varian 160 XP is an ion implanter. A variant, the Varian 160 XP Ion, is configured as a 150 mm high-current implanter.