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Comparison ledger

200 ACUversusTCP 9600 Metal

Axcelis 200 ACU, Lam Research TCP 9600 Metal, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
200 ACUAxcelis
TCP 9600 MetalLam Research
OEMAxcelisLam Research
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyAxcelis NV GSD 200Lam Research TCP 9600
Specifications
ConfigurationParts Machine[1]SMIF[5]
ManufacturerAxcelis[1]—
Model200 ACU[1]—
Tool typeAsher[1]—
Wafer size200mm[3]—
Serial numberAU6A356AH[3]—
Computer systemM 200 PC, M 200[4]—
Part numberSC 4572 A[4]—
Volts208[4]—
Amps30[4]—
Equipment typeAsher[1]—
Wafer configuration8 inch[2]—
Supported wafer sizes—150mm (6 inch) and 200mm[6]
Process pressure range—0 - 100 mTorr[7]
Top electrode power—0 - 1250 W[7]
Lower electrode power—0 - 1200 W[7]
Process temperature—55 °C[7]
Process gases—Cl2, BCl3, HBr, SF6, CF4, Ar, N2, O2, He[7]
Endpoint detection—Adjustable monochromator[7]
Wafer clamp—Electrostatic chuck (ESC) with helium backside cooling[8]
Electrode gap—Fixed gap 8 inch TCP coil[8]
Number of RF generators—3 (AE RFG 1250)[8]
Power supply requirements—208V, 80A, 3-Phase, 50/60Hz[8]
DSQ strip module—Included[7]
Software version—Envision 1.6.1-012[8]
Aluminum etch rate—> 8000 Å/min[6]
Aluminum non-uniformity—+/- 15%[6]
System uptime—Typically > 85%[6]
Mean time to change (MTTC)—12 hours[6]
Mean time between failures (MTBF)—> 125 hours[6]
Mean time to repair (MTTR)—< 4 hours[6]

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Sources (9)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]semistarcorp.comsemistarcorp.com
  3. [3]wotol.comwotol.com
  4. [4]semistarcorp.comsemistarcorp.com
  5. [5]inventory listing
  6. [6]semigroup.comsemigroup.com
  7. [7]semistarcorp.comsemistarcorp.com
  8. [8]solutions-on-silicon.comsolutions-on-silicon.com
  9. [9]waferpedia.comwaferpedia.com