Applied Materials
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The Applied Materials / Varian VIISta 810 is a 12-inch medium current ion implanter. The VIISta 810 is designed for semiconductor ion implantation.[1][2]
The Applied Materials VIISta 810 is an ion implantation system designed for semiconductor manufacturing. The VIISta 810 is a medium current implanter. The system handles 12-inch (300 mm) wafers.[1][2]
Tools documented as functional equivalents — same process step and wafer size, from a different manufacturer. Each equivalence cites its source.
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The VIISta 810 belongs to the ion implantation category.[2]
The following facts about the VIISta 810 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the VIISta 810 are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the VIISta 810 are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the VIISta 810 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the VIISta 810 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the VIISta 810 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Oct 11, 2026.
The Varian EHPi 500 is a medium current ion implanter offering an energy range of 5–260 keV (X+) and capable of handling wafer sizes up to 200 mm for features down to 0.18 µm.
The Varian EHPI E 220 is an ion implanter described as an 8-inch, medium-current system with a SMIF interface.
The Varian 0216 7696, E 11368072 ESC is an electrostatic chuck (ESC) platen of the ADV-S type, categorized under ion implantation equipment.