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Oxford Instruments

FlexAL

DepositionOxford Instruments FlexAL family
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This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.

The Oxford FlexAL is an atomic layer deposition (ALD) system that supports both thermal and plasma-assisted reaction mechanisms. The FlexAL is capable of depositing highly uniform, thin and conformal dielectric films at low temperatures.[1][2]

FlexAL — Inventory photo
Fig. 01FlexALInventory photo[3]

Power

yes[4]

Gas delivery

BTBAS, TBTDMT, TDMAT, CF4[3]

Optics

yes[4]

What it is

The Oxford Instruments FlexAL is an atomic layer deposition (ALD) system. The FlexAL supports both plasma-assisted and thermal reaction mechanisms for deposition. The FlexAL ALD tool is capable of depositing highly uniform, thin, and conformal dielectric films at low temperatures. The system is part of a cluster tool arrangement at some installations, sharing a common loadlock with a PlasmaLab 100 PECVD system. The FlexAL is used for depositing materials such as Al₂O₃, TiO₂, HfO₂, SiO₂, and various nitrides including TiN, TaN, and SiN.[2][3][4][5]

How it works

The FlexAL operates on the principle of atomic layer deposition, using sequential, self-limiting surface reactions to grow thin films. The system can employ either a remote plasma source or thermal energy to drive the chemical reactions. In plasma-assisted ALD, a remote plasma generates reactive species that enable deposition at lower substrate temperatures. The chamber can be heated up to 150 °C, and the substrate holder can be heated up to 550 °C. The system is configured to handle wafers up to 200 mm in diameter.[4][2]

What do the numbers mean?

Power & electrical1

Ozone generator
yes[4]
Accurate?

Wafer handling3

Wafer size
up to 200 mm[4]
Accurate?
Substrate temperature range
up to 550 °C[4]
Accurate?
Cluster capability
shared loadlock with PlasmaLab 100 PECVD[2]
Accurate?

Gas & chemistry4

Gases
BTBAS, TBTDMT, TDMAT, CF4[3]
Accurate?
Precursors (examples)
TMA, TIIP, TEMAH, BTBAS, TBTDMT, TDMAT[2]
Accurate?
Gases (from listing)
BTBAS, TBTDMT, TDMAT, CF4[3]
Accurate?
Residual gas analyser
yes[4]
Accurate?

Optics & imaging1

Optical emission spectrometer (integrated)
yes[4]
Accurate?

Configuration & options7

Compatible with TiN, TaN, TiO, TaO, SiN[3]
Accurate?
Deposition method
Atomic layer deposition (ALD), thermal and plasma-assisted[2]
Accurate?
Chamber temperature
up to 150 °C[4]
Accurate?
Film types (commissioned)
Al2O3, TiO2, HfO2, SiO2[2]
Accurate?
Film types (high-quality nitride superconductors)
NbN, TiN[4]
Accurate?
Glove box (inert atmosphere)
yes[4]
Accurate?
Source configuration
remote plasma and thermal[4]
Accurate?

Vintage & configurations

Documented models & variants

DesignationGenerationVintageChangesSource
System 100 PECVD / FlexAL ALD (thermal/plasma) cluster system——Cluster configuration with FlexAL ALD and PlasmaLab 100 PECVD sharing a common loadlockuwaterloo.ca[2]
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • GasesBTBAS, TBTDMT, TDMAT, CF4[3]
  • Precursors (examples)TMA, TIIP, TEMAH, BTBAS, TBTDMT, TDMAT[2]
  • Gases (from listing)BTBAS, TBTDMT, TDMAT, CF4[3]
  • Ozone generatoryes[4]
  • Residual gas analyseryes[4]

Where are the manuals?

Publicly hosted documents referencing this tool, linked at their original location. Hosted by the linked institutions — availability may change.

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What temperature ranges are available?

The chamber can be heated to up to 150 °C. The substrate holder can be heated to up to 550 °C.[4]

What materials can be deposited using the FlexAL?

Commissioned film types via ALD include Al₂O₃ (plasma and thermal processes using TMA precursor), TiO₂ (plasma process using TIIP precursor), HfO₂ (plasma process using TEMAH precursor), and SiO₂ (plasma process using BTBAS precursor). Additional materials compatible with the system include TiN, TaN, and SiN.[2][3]

Not publicly documented

The following facts about the FlexAL are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the FlexAL are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • The control-system platform and OS era of the FlexAL are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the FlexAL are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the FlexAL is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

  • No publicly documented compatible parts, consumables, or accessories for the FlexAL are on record.

    Answerable by: an OEM parts catalog or a service engineer

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Sources & citations

Sources (7)Every fact above is drawn from these public sources
  1. [1]Equipment Resources | CNF — cnf.cornell.educnf.cornell.edu
  2. [2]uwaterloo.ca — uwaterloo.cauwaterloo.ca
  3. [3]Inventory photo
  4. [4]epfl.ch — epfl.chepfl.ch
  5. [5]Vacuum Deposition Recipes - UCSB Nanofab Wiki — wiki.nanotech.ucsb.eduwiki.nanotech.ucsb.edu
  6. [6]Capabilities | UD Nanofabrication Facility — udnf.udel.eduudnf.udel.edu
  7. [7]Brochure_plas_100.pdf — nanofab.utah.edunanofab.utah.edu
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Last updated Sep 23, 2026.

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