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Oxford Instruments

NGP80

Etch200mmOxford Instruments NGP80 family
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Oxford InstrumentsNGP80
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Wafer size

200mm

Power

300 W[4]

Vacuum

down to -150 °C[3]

Gas delivery

O2, CF4, SF6, Ar, CHF3, N2[4]

How it works

The PlasmaPro 80 RIE uses a graphite chuck with a temperature range of 5 to 80 degrees Celsius to control substrate temperature. The system employs electrode cooling to manage thermal load during etching.[4]

What do the numbers mean?

Power & electrical1

RF power
300 W[4]
Accurate?

Vacuum & pumping3

Cryogenic temperature option
down to -150 °C[3]
Accurate?
Base pressure
≤5×10⁻⁷ mbar[2]
Accurate?
Process pressure range
10 mTorr to 10 Torr[2]
Accurate?

Wafer handling6

Wafer size
up to 200 mm[2]
Accurate?
Substrate temperature range (standard)
5-80 °C[4]
Accurate?
Substrate temperature (max)
400 °C[2]
Accurate?
Chuck material
graphite[4]
Accurate?
Wafer Handling
pieces (unmounted), 100 mm, 150 mm[4]
Accurate?
Chuck Temperature Range
5–80 °C[4]
Accurate?

Gas & chemistry2

Gas species (RIE variant)
O2, CF4, SF6, Ar, CHF3, N2[4]
Accurate?
Gas Species
O2, CF4, SF6, Ar, CHF3, N2[4]
Accurate?

Configuration & options7

Equipment name
Oxford NGP80 RIE[1]
Accurate?
Model
NGP80[2]
Accurate?
Configuration options
RIE, PECVD, RIE/PECVD[2]
Accurate?
Electrode diameter
240 mm[3]
Accurate?
Process Type
Reactive Ion Etch (RIE)[4]
Accurate?
Model
PlasmaPro 80 RIE[4]
Accurate?
Location
room W1-062[5]
Accurate?

Vintage & configurations

Documented models & variants

DesignationGenerationVintageChangesSource
NGP80 RIE——Dedicated reactive ion etch configuration with separate showerhead and matching network.scribd.com[3]
NGP80 PECVD——Dedicated plasma-enhanced chemical vapor deposition configuration for uniform dielectric film deposition with selectable high/low frequency plasma power for stress control.scribd.com[3]
NGP80 ICP——Inductively coupled plasma configuration with electrostatic shield for low damage, high rate etching.scribd.com[3]
NGP80 RIE/PE——Combined RIE and plasma etch (PE) mode in a single system, combining anisotropy of RIE with selectivity of PE.scribd.com[3]
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • RF power300 W[4]
  • Cryogenic temperature optiondown to -150 °C[3]
  • Base pressure≤5×10⁻⁷ mbar[2]
  • Process pressure range10 mTorr to 10 Torr[2]
  • Gas species (RIE variant)O2, CF4, SF6, Ar, CHF3, N2[4]
  • Gas SpeciesO2, CF4, SF6, Ar, CHF3, N2[4]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What process area is the Oxford NGP80 RIE located in?

The Oxford NGP80 RIE is located in the plasma etch process area, room W1-062.[5]

Which company manufactures the NGP80?

The NGP80 is manufactured by Oxford Instruments.[4]

Not publicly documented

The following facts about the NGP80 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the NGP80 are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • The control-system platform and OS era of the NGP80 are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the NGP80 are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the NGP80 is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

  • No publicly documented compatible parts, consumables, or accessories for the NGP80 are on record.

    Answerable by: an OEM parts catalog or a service engineer

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Sources & citations

Sources (5)Every fact above is drawn from these public sources
  1. [1]confluence.nanofab.ualberta.ca — confluence.nanofab.ualberta.caconfluence.nanofab.ualberta.ca
  2. [2]instrumenthive.cominstrumenthive.com
  3. [3]scribd.com — scribd.comscribd.com
  4. [4]confluence.nanofab.ualberta.ca — confluence.nanofab.ualberta.caconfluence.nanofab.ualberta.ca
  5. [5]waferpedia.com — waferpedia.comwaferpedia.com
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Last updated Sep 26, 2026.

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