Oxford Instruments
PlasmaPro80
The Oxford Instruments PlasmaPro80 is a reactive ion etching (RIE) dry etcher using fluorine chemistry. The PlasmaPro80 handles wafers up to 200 mm with an open-load system (no load lock). The PlasmaPro80 has a maximum power of 300 W at 13.56 MHz.[1][2]
Plate 01Oxford Instruments - PlasmaPro 80 Training
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Wafer size
200mm
Power
300 W @ 13.56 MHz[1]
Gas delivery
fluorine chemistry[1]
Optics
Laser reflectometry/interferometry[1]
What it is
The Oxford Instruments PlasmaPro80 is a reactive ion etching (RIE) dry etcher that uses fluorine chemistry. The tool is configured in two variants, designated RIE 1 and RIE 2. The RIE 1 variant is dedicated to etching hBN, SiGe, graphite, and graphene. The RIE 2 variant is dedicated to niobium, tantalum, and superconducting nitride thin films. The PlasmaPro80 handles wafers up to 200 mm using an open-load system with no load lock.[1][4][2]
How it works
The PlasmaPro80 is an RIE plasma etcher with a maximum plasma power of 300 W at a frequency of 13.56 MHz. The tool uses an open-load system with no load lock. The RIE 1 configuration supplies the process gases CHF3, SF6, O2, and Ar. The RIE 2 configuration supplies CF4, CHF3, SF6, O2, and Ar. The RIE 2 configuration includes laser reflectometry/interferometry end-point detection.[1][4][2]
Where it fits in the process flow
General reference — not yet source-verifiedPlasma etchers of this class are placed in the fabrication flow after lithography, where they transfer the resist or hard-mask pattern into underlying dielectric, semiconductor, or conductor layers. The etch step is followed by resist stripping and cleaning operations that remove the masking material and residual byproducts.
Applications
The PlasmaPro80 is used for soft etching of hBN, SiGe, graphite, and graphene in its RIE 1 configuration. The RIE 2 configuration is used for etching niobium, tantalum, and superconducting nitride thin films. The RIE 2 configuration processes only 100 mm wafers and does not accept chips.[1][4][2]
- hBN, SiGe, graphite and graphene soft etching
- Nb, Ta and superconducting nitride thin-films etching
What do the numbers mean?
Power & electrical2
Wafer handling9
Gas & chemistry5
Optics & imaging2
Configuration & options8
Vintage & configurations
Documented models & variants
| Designation | Generation | Vintage | Changes | Source |
|---|---|---|---|---|
| Oxford PlasmaPro80, RIE dry etcher, fluorine chemistry (RIE 1) | — | — | ONLY hBN, SiGe, Graphite and Graphene etching; RIE plasma etcher; CHF3, SF6, O2, Ar; max 300W @ 13.56MHz; open-load system (no load lock); chips to wafer up to 200mm; hBN, SiGe, Graphite and Graphene soft etching. | epfl.ch[1] |
| Oxford PlasmaPro80, RIE dry etcher, fluorine chemistry (RIE 2) | — | — | ONLY Nb/Ti/Ta based samples; RIE plasma etcher; 100mm wafers; CF4, CHF3, SF6, O2, Ar; max 300W @ 13.56MHz; open-load system (no load lock); Nb, Ta and superconducting nitride thin-films etching; laser reflectometry/interferometry end-point-detection. | epfl.ch[1] |
| RIE 1 | — | — | Dedicated to hBN, SiGe, graphite, and graphene soft etching; uses CHF3, SF6, O2, Ar; supports chips to wafer up to 200 mm. | epfl.ch[1] |
| RIE 2 | — | — | Dedicated to Nb, Ta, and superconducting nitride thin-film etching; uses CF4, CHF3, SF6, O2, Ar; only 100 mm wafers; includes laser reflectometry/interferometry end-point detection. | epfl.ch[1] |
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
Not publicly documented
The following facts about the PlasmaPro80 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the PlasmaPro80 are on record.
Answerable by: OEM historical records or a trade-press announcement
The control-system platform and OS era of the PlasmaPro80 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the PlasmaPro80 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the PlasmaPro80 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the PlasmaPro80 are on record.
Answerable by: an OEM parts catalog or a service engineer
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (4)Every fact above is drawn from these public sources
- [1]epfl.ch — epfl.chepfl.ch
- [2]PlasmaPro80 — Oxford Instruments | Specs, Sourcing & Service | Waferpedia — waferpedia.comwaferpedia.com
- [3]semitech.com.trsemitech.com.tr
- [4]Etching ‒ Center of MicroNanoTechnology CMi ‐ EPFL — epfl.chepfl.ch
Last updated Oct 3, 2026.
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