Varian

An ion implanter generates a beam of ions from a source, isolates the desired ion species using a mass analyzer, accelerates the ions to the required energy, and then scans the beam across the wafer surface. The depth of ion penetration is controlled by the acceleration energy, while the dose is controlled by the beam current and exposure time.
Ion implantation typically follows photoresist patterning and precedes thermal annealing. The resist defines areas to be doped, and the implant step introduces dopants. After implantation, an anneal step activates the dopants and repairs crystal damage.
| Designation | Generation | Vintage | Changes | Source |
|---|---|---|---|---|
| Viision 80 High Current | — | — | High current variant | Equipment inventory listing[3] |
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It injects selected ions into a substrate to change the material's electrical characteristics in a controlled way.
It allows precise control of where dopants go and how deeply they penetrate, which is important for device structure formation.
It creates the implanted dopant profile, but later thermal processing is commonly used in the broader flow to activate the dopants and repair damage.
Machines of this class are used primarily for semiconductor wafers and other substrates that require controlled doping or near-surface modification.
The following facts about the Viision 80 Ion are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Viision 80 Ion are on record.
Answerable by: OEM historical records or a trade-press announcement
The control-system platform and OS era of the Viision 80 Ion are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the Viision 80 Ion are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the Viision 80 Ion is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the Viision 80 Ion are on record.
Answerable by: an OEM parts catalog or a service engineer
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Last updated Oct 3, 2026.
The Varian 0216 7696, E 11368072 ESC is an electrostatic chuck (ESC) platen of the ADV-S type, categorized under ion implantation equipment.
The Varian 160 XP is an ion implanter. A variant, the Varian 160 XP Ion, is configured as a 150 mm high-current implanter.
The Varian 160 XP Ion is an ion implantation tool configured as a 150mm high-current implanter.