STS

The STS Multiplex is a PECVD deposition system for 6-inch wafers, processing silicon nitride with gases including oxygen, carbon tetrafluoride, silane, nitrous oxide, and ammonia.

The STS Multiplex ASE ICP Deep Silicon Etcher is a low- and high-frequency ICP etch system for deep silicon trench etching of a single 6-inch substrate.

The STS 310 is a plasma-enhanced chemical-vapor-deposition (PECVD) system used for depositing silicon dioxide and silicon nitride films on 100-mm diameter wafers.

General referenceSTS ICP is an etch tool class used for plasma-based material removal and surface pattern transfer. It belongs to the category of inductively coupled plasma etch systems used in semiconductor and related microfabrication work.

The STS 320 is a parallel-plate reactive ion etching (RIE) tool for etching silicon, silicon nitride, and transition metals with volatile fluorides.

The STS M Plex Multiplex ICP Etcher is an inductively coupled plasma etcher specified for 3-inch wafers.

STS 320 PC is a fully automatic computer controlled reactive ion etching system with end point detection.

The STS Multiplex ICP ASE Advanced Silicon Etch (ASE) system is an etch tool configured for 150 mm wafers in the cited inventory records.

The STS MXP Multiplex ICP is an inductively coupled plasma etcher.

The STS Multiplex ICP is a load-locked inductively coupled plasma etch system used for deep silicon etching using the Bosch process.

The STS Multiplex ICP Advanced Oxide Etcher (AOE) is a semi-auto carousel etcher for 6-inch to 8-inch wafers.

The STS MACS ICP HR is an etcher described as an 8-inch, 1-chamber system rated at 380V, 60Hz, 40A, 3-phase.