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Kurt Lesker

150LX

Deposition150mmKurt Lesker 150LX family
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The Kurt Lesker 150LX is an atomic layer deposition system. The Kurt Lesker 150LX is designed for advanced research and development applications. The Kurt Lesker 150LX processes wafers up to 150 mm.[1][2][3]

Kurt Lesker150LX
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Wafer size

150mm

Power

1 kW RF remote ICP[4]

Gas delivery

Up to twelve (12)[3]

What it is

The Kurt Lesker 150LX is an atomic layer deposition system used for thin film deposition.[1][3][4]

The Kurt Lesker 150LX is a plasma-enhanced atomic layer deposition platform for advanced research and development use.[1][2][3][4]

How it works

The 150LX uses a plasma-assisted process that expands the deposition window by cracking precursor molecules with plasma rather than relying only on thermal energy from the heated substrate.[1]

The 150LX is a load-locked system, and the processing chamber remains isolated from the sample loading chamber to help preserve chamber cleanliness.[1]

Where it fits in the process flow

The 150LX supports cluster-tool connectivity, which allows process and analysis modules to be linked so that sensitive surfaces and interfaces can avoid unwanted atmosphere exposure between steps.[3][4]

Applications

The 150LX is used for conformal thin film fabrication with atomic-scale control.[1]

The 150LX is used for materials including aluminium oxide, hafnium oxide, zirconium oxide, hafnium zirconium oxide, silicon dioxide, silicon nitride, titanium nitride, titanium oxide, aluminium nitride, platinum, and gallium oxide.[1][3][4]

The 150LX supports thermal ALD, plasma-enhanced ALD, dynamic and static exposure modes for high-aspect-ratio features, variable residence mode, and in situ ellipsometry for film-thickness monitoring.[2]

  • Conformal fabrication of thin films
  • Atomic-scale thin-film deposition
  • Growth of Al2O3 films by thermal- or PE-ALD
  • Growth of HfO2 films by thermal- or PE-ALD
  • Growth of ZrO2 films by thermal- or PE-ALD
  • Growth of HfZrO2 films by thermal- or PE-ALD
  • Growth of TiN films by PE-ALD
  • Growth of Ga2O3 films by PE-ALD

What do the numbers mean?

Power & electrical1

Plasma source
1 kW RF remote ICP[4]
Accurate?

Wafer handling10

Wafer size
Up to full 150 mm (6") wafers[1]
Accurate?
Substrate size
Up to 150mm[2]
Accurate?
Substrate size
Up to full 150 mm (6") wafers[1]
Accurate?
Substrate heating
Up to 600°C[2]2 sources
Accurate?
Substrate heating
Up to 600 o C[3]
Accurate?
Substrate heating
Up to 500 ºC[4]
Accurate?
Load lock
Load-locked system[1]
Accurate?
Substrate size
Up to 150 mm (6 in) wafers[1]
Accurate?
Substrate temperature
Up to 600°C[2]
Accurate?
Substrate handling
Load locked single wafer transfer[4]
Accurate?

Gas & chemistry7

Precursor inlets to chamber
Four (4), standard on chamber, independently heated[2]
Accurate?
Precursor sources
Up to twelve (12)[3]
Accurate?
Precursor types
Up to fourteen (14)[2]
Accurate?
Precursor inlets
Four standard on chamber, independently heated[2]
Accurate?
Precursor capacity
Up to fourteen vapor draw flow through, bubbler, ozone pulsed gas plasma process gases[2]
Accurate?
Precursor sources
Up to 12 precursor sources[3]
Accurate?
Process gases
Argon, oxygen, nitrogen, hydrogen, ammonia, ozone[4]
Accurate?

Optics & imaging3

In situ metrology
Film Sense FS-1 Multi-Wavelength ellipsometer[1]
Accurate?
ALD process modes
Plasma Enhanced, Thermal only, Dynamic and Static Exposure for HAR, Variable Residence Mode (VRM)[2]
Accurate?
Process modes
Plasma enhanced, thermal only, dynamic and static exposure for HAR, variable residence mode (VRM)[2]
Accurate?

Configuration & options11

OEM
Kurt Lesker[1]
Accurate?
Model
ALD-150LX[1]
Accurate?
Type
Plasma-enhanced atomic layer deposition (PE-ALD) system[1]
Accurate?
Location
Cleanroom[1]
Accurate?
Operating mode
Load-locked system[1]
Accurate?
OEM
Kurt J. Lesker[1]
Accurate?
Process
Plasma-enhanced atomic layer deposition (PE-ALD)[1]
Accurate?
Ellipsometry
Standard on chamber[2]
Accurate?
Model
Kurt Lesker ALD-150LX[1]
Accurate?
Process type
Plasma-enhanced atomic layer deposition (PE-ALD)[1]
Accurate?
Ellipsometry ports
Standard on chamber[2]
Accurate?
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Precursor inlets to chamberFour (4), standard on chamber, independently heated[2]
  • Precursor sourcesUp to twelve (12)[3]
  • Precursor typesUp to fourteen (14)[2]
  • Plasma source1 kW RF remote ICP[4]
  • Precursor inletsFour standard on chamber, independently heated[2]
  • Precursor capacityUp to fourteen vapor draw flow through, bubbler, ozone pulsed gas plasma process gases[2]
  • Precursor sourcesUp to 12 precursor sources[3]
  • Process gasesArgon, oxygen, nitrogen, hydrogen, ammonia, ozone[4]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What process modes are supported on the 150LX?

The 150LX supports plasma-enhanced, thermal-only, dynamic, and static exposure modes for high-aspect-ratio processing, along with variable residence mode.[2]

Not publicly documented

The following facts about the 150LX are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 150LX are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the 150LX are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the 150LX are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the 150LX are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the 150LX is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

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Sources & citations

Sources (4)Every fact above is drawn from these public sources
  1. [1]smif.pratt.duke.edu — smif.pratt.duke.edusmif.pratt.duke.edu
  2. [2]lesker.com — lesker.comlesker.com
  3. [3]mrl.illinois.edu — mrl.illinois.edumrl.illinois.edu
  4. [4]confluence.nanofab.ualberta.ca — confluence.nanofab.ualberta.caconfluence.nanofab.ualberta.ca
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Last updated Oct 5, 2026.

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